Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(1 0 0) during superlattice formation

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 264-268

  Mano, T ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A1. Surface process; A3. Molecular beam epitaxy; B2. Semiconductor III V materials

Indexed keywords

ANNEALING; DESORPTION; MOLECULAR BEAM EPITAXY; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES;

QUANTUM DOT ORDERING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0037382107     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02378-3     Document Type: Conference Paper

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