Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 612-618

  Chang, Jiho ^a   Takai, Toshiaki ^a   Godo, Kenji ^a   Makino, Hisao ^a   Goto, Takenari ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Excitation localization; A1. Luminescence; A3. Molecular beam epitaxy; B1. II VI compounds

Indexed keywords

EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

LOCALIZED EXCITONS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0037381610     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00975-8     Document Type: Conference Paper

References (26)

1. Grundmann M. Physica E. 5:2000;167.
2. Kim J., Yu P., Leem J., Jeon M., Kim J., Kim S. J. Appl. Phys. 91(8):2002;5055.
3. Altieri P., Sanguinetti S., Gurioli M., Grilli E., Guzzi M., Frigeri P., Franchi S., Trevisi G. Mater. Sci. Eng. B. 88:2002;234.
4. Kobayashi M., Nakamura S., Kitamura K., Ueda H., Jia A., Yoshikawa A., Shimotomai M., Kato Y., Takahashi K. J. Vac. Sci. Technol. B. 17(5):1999;2005.
5. Tsatsulnikov A.F., Kovsh A.R., Zhukov A.E., Shernyyakov Y.M., Musikhin Y.G., Mintairov A.M., Merz J.L., Ledentsov N.N., Bimberg D. J. Appl. Phys. 88(11):2000;6272.
6. Narukawa Y., Kawakami Y., Fujita S., Fujita S., Nakamura S. Phys. Rev. B. 55(4):1997;R1938.
7. Satake A., Masumoto Y. Phys. Rev. B. 57(4):1998;R2041.
8. Cohen E., Sturge M.D. Phys. Rev. B. 28:1982;3828.
9. Ding J., Jeon H., Ishihara T., Hagerott M., Nurmikko A.V., Luo H., Samarth N., Furdyna J. Phys. Rev. Lett. 69(11):1992;1707.
10. van der Merwe J.H. J. Appl. Phys. 34(1):1963;117.
11. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
12. Wei S.H., Zunger A. Appl. Phys. Lett. 72(16):1998;2011.
13. Landolt Bornstein, Semiconductors, Vol. 22, Springer, Berlin, (p.179, for ZnSe; p.210 for CdTe).
14. Matsumura N., Kimura Y., Endo H., Saraie J. J. Crystal Growth. 214/215:2000;694.
15. Song J.S., Chang J.H., Hong S.K., Cho M.W., Makino H., Hanada T., Yao T. J. Crystal Growth. 242:2002;95.
16. Hartmann J.M., Feuillet G., Charleux M., Mariette H. J. Appl. Phys. 79(6):1996;3035.
17. Tatarenko S., Bassani F., Klein J.C., Saminadayar K., Clibert J., Etgens V.H. J. Vac. Sci. Technol. A. 12(1):1994;140.
18. Rajavel D., Mueller F., Benson J.D., Wagner B.K., Benzill R.G., Summers C.J. J. Vac. Sci. Technol. A. 8(2):1990;1002.
19. Daudin B., Tatarenkko S., Brun-Le Cunff D. Phys. Rev. B. 52(11):1995;7822.
20. Ohtake A., Hanada T., Yasuda T., Arai K., Yao T. Phys. Rev. B. 60(11):1999;8326.
21. Garcia A., Northrup J.E. Appl. Phys. Lett. 65(6):1994;708.
22. Pashley M.D. Phys. Rev. B. 40(15):1989;10481.
23. Singh J., Bajaj K.K. Appl. Phys. Lett. 44(11):1984;1075.
24. Patane A., Polimeni A., Capizzi M., Martelli F. Phys. Rev. B. 52(4):1995;2784.
25. Permogorov S., Raznitsky A. J. Lumin. 52:1992;201.
26. Pantane A., Polimeni A., Capizzi M., Martelli F. Phys. Rev. B. 52(4):1995;2784.