Three-dimensional kinematical analyses for surface grinding of large scale substrate

Precision Engineering

Volumn 27, Issue 2, 2003, Pages 175-184

  Zhou, Libo ^a   Shimizu, Jun ^a   Shinohara, Kazuhiro ^a   Eda, Hiroshi ^a  

^a IBARAKI UNIVERSITY   (Japan)

Author keywords

Alignment; Cutting path; Cutting path density; Fixed abrasive process; Flatness; Large scale substrate; Roughness; Si wafer

Indexed keywords

MACHINE TOOLS; MACHINING; SILICON WAFERS; SURFACE ROUGHNESS;

SURFACE GRINDING;

KINEMATICS;

EID: 0037378315     PISSN: 01416359     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0141-6359(02)00225-8     Document Type: Article

References (4)

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2. Eda H., Zhou L.et al. Development of one-stop manufacturing system for large-sized ∅ 300 mm Si wafer. J. JSPE. 67(10):2001;1693. [in Japanese].
3. Taniguchi N. Nano-technology. Oxford: Oxford Science Publication; 1996. p. 21.
4. Kimura K, et al. Characteristics of CMP using hard wheel pad. Proc JSPE Autumn 1988;245 [in Japanese].