The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 410-413

  Tetelbaum, D I ^a   Trushin, S A ^a   Mikhaylov, A N ^a   Vasil'ev, V K ^a   Kachurin, G A ^b   Yanovskaya, S G ^b   Gaponova, D M ^c  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

Ion implantation; Nanocrystalline silicon; Phosphorus doping; Photoluminescence; Quantum dots; Silicon dioxide

Indexed keywords

ANNEALING; DOPING (ADDITIVES); NANOSTRUCTURED MATERIALS; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

NANOCRYSTALLINE SILICON;

SILICA;

EID: 0037372195     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00614-8     Document Type: Conference Paper

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