Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tc cuprates

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 9, 2003, Pages 925091-925093

  Tohyama, T ^a   Maekawa, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER DERIVATIVE;

ARTICLE; CALCULATION; CHEMICAL INTERACTION; CHEMICAL MODIFICATION; CONCENTRATION PROCESS; CORRELATION ANALYSIS; DATA ANALYSIS; DOPING; ELECTRON DOPED SYSTEM; ELECTRON TRANSPORT; ENTROPY; HIGH TEMPERATURE PROCEDURES; MATHEMATICAL ANALYSIS; REPRODUCIBILITY; THERMODYNAMICS;

EID: 0037366412     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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