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Volumn 313-316, Issue SUPPL., 2003, Pages 604-608

Computer modeling of ion implanted deuterium release from tungsten

Author keywords

Defects; Desorption; Diffusion; Hydrogen; Ion trapping; Tungsten

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CHEMISORPTION; DESORPTION; DIFFUSION; HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; TUNGSTEN;

EID: 0037346888     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(02)01434-4     Document Type: Conference Paper
Times cited : (19)

References (9)
  • 2
    • 0012481631 scopus 로고    scopus 로고
    • Sandia National Laboratories, Preprint SAND 83-8231, 1983
    • M.I. Baskes, Sandia National Laboratories, Preprint SAND 83-8231, 1983.
    • Baskes, M.I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.