A novel etching technology with reactive ion etching system for GaAs via-hole etching applications

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 1, 2003, Pages 57-59

  Lin, C S ^a   Fang, Y K ^a   Ting, S F ^a   Wu, C L ^b   Chang, C S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Transcom Inc   (Taiwan)

Author keywords

Two step etching; Via hole etching

Indexed keywords

DRY ETCHING; FIELD EFFECT TRANSISTORS; OPTIMIZATION; PHOTORESISTS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE;

HOLE ETCHING; TWO STEP ETCHING;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0037331036     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2002.807738     Document Type: Article

References (7)

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