Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K

Review of Scientific Instruments

Volumn 74, Issue 2, 2003, Pages 1145-1146

  Oukhanski, N ^a   Grajcar, M ^a   II'ichev, E ^a   Meyer, H G ^a  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CRYOGENICS; ELECTRIC IMPEDANCE; ELECTRON MOBILITY; EXTRAPOLATION;

POWER CONSUMPTION;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 0037327552     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532539     Document Type: Article

References (7)

1. J. J. Bautista, J. Laskar, and P. Szydlik, TDA Progress Report 42-120, February 15, 1995, pp. 104-120.
2. J. E. Fernandez, TMO Progress Report 42-135, November 15, 1998, pp. 1-9.
3. I. Angelov, N. Wadefalk, J. Stenarson, E. Kollberg, P. Starski, and H. Zirath, Presented at the IEEE MTT-S, 2000. Available: http://www.submm.caltech.edu/cso/receivers/chalmers/chalmers_lna.html
4. J. E. Mooij, T. P. Orlando, L. Levitov, L. Tian, van der Wal, and S. Lloyd, Science 285, 1036 (1999).
5. E. Il'ichev et al., Rev. Sci. Instrum. 72, 1882 (2001).
6. E. Il'ichev et al., Appl. Phys. Lett. 80, 4184 (2002).
7. P. Horowitz and W. Hill, The Art of Electronics, 2nd ed. (Cambridge University Press, Cambridge, 1989), Vol. 2, pp. 51-53.