LPCVD silicon nitride uniformity improvement using adaptive real-time temperature control

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 1, 2003, Pages 26-35

  Gumpher, John ^a   Bather, Wayne A ^b   Wedel, Darin ^b  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Adaptive real time temperature control; LPCVD; MOS transistor; Multiple deposition; Silicon nitride; Uniformity; Vertical furnace

Indexed keywords

ADAPTIVE CONTROL SYSTEMS; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; MOSFET DEVICES; OPTIMIZATION; SILICON WAFERS; SUBSTRATES; TEMPERATURE CONTROL; THIN FILMS; THREE TERM CONTROL SYSTEMS;

ADAPTIVE REAL-TIME TEMPERATURE CONTROL; DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MULTIPLE DEPOSITION;

SILICON NITRIDE;

EID: 0037325877     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2002.807741     Document Type: Article

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