Using broadband reflectometry for fast trench-depth measurement

Solid State Technology

Volumn 46, Issue 2, 2003, Pages 53-54+56+59

  Herrick, Robert ^a   Pardue, Teina ^a   Walsh, Phillip ^b  

^a FAIRCHILD SEMICONDUCTOR   (United States)

^b N and K Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BROADBAND NETWORKS; LENSES; MIRRORS; MOSFET DEVICES; NONDESTRUCTIVE EXAMINATION; OPTICAL BEAM SPLITTERS; PROFILOMETRY; REAL TIME SYSTEMS; SCANNING ELECTRON MICROSCOPY; TRENCHING;

TRENCH DEPTH; WAVELENGTH;

REFLECTOMETERS;

EID: 0037325841     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (4)

1. D. Buerman, et al., US Patent No. 6,128,085., Oct. 1999.
2. A.R. Forouhi, et al., Phys. Rev. B, 38, 1865, 1988.
3. G.G. Li, et al., Semiconductor Fabtech, pp. 279-283, Oct. 1998.
4. C. Bencher, et al., Solid State Technology, pp. 109-114, March 1997.