|
Volumn 312, Issue 2-3, 2003, Pages 141-145
|
Helium depth profiling in tantalum after ion implantation and high-temperature annealing
|
Author keywords
[No Author keywords available]
|
Indexed keywords
AGGLOMERATION;
ANNEALING;
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
TANTALUM;
HIGH-TEMPERATURE ANNEALING;
HELIUM;
|
EID: 0037323119
PISSN: 00223115
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3115(02)01589-1 Document Type: Article |
Times cited : (14)
|
References (20)
|