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Volumn 312, Issue 2-3, 2003, Pages 141-145

Helium depth profiling in tantalum after ion implantation and high-temperature annealing

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; TANTALUM;

EID: 0037323119     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(02)01589-1     Document Type: Article
Times cited : (14)

References (20)
  • 16
    • 0013228301 scopus 로고    scopus 로고
    • private communication
    • O. Bersillon, private communication.
    • Bersillon, O.1
  • 20
    • 0013286144 scopus 로고
    • PhD thesis, Konstanz
    • G. Grübel, PhD thesis, Konstanz, 1987.
    • (1987)
    • Grübel, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.