Modeling plasma immersion ion implantation under trapezoidal voltage pulses

IEEE Transactions on Plasma Science

Volumn 31, Issue 1 II, 2003, Pages 104-111

  Barroso, Joaquim José ^a   Rossi, Jóse Osvaldo ^a   Ueda, Mário ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

Child law; Plasma immersion ion implantation (PIII); Plasma sheath

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ION IMPLANTATION; SECONDARY EMISSION;

PLASMA IMMERSION;

PLASMA SHEATHS;

EID: 0037310180     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2003.808871     Document Type: Article

References (14)

1. S. M. Malik, K. Sridharan, R. P. Fetherson, A. Chen, and J. R. Conrad, "Overview of plasma ion implantation research at University of Wisconsin-Madison," J. Vac. Sci. Technol. B, vol. 12, no. 2, pp. 843-849, 1994.
2. M. Ueda, G. F. Gomes, J. O. Rossi, J. J. Barroso, A. F. Beloto, E. Abramof, and H. Reuther, "Plasma immersion ion implantation using a glow discharge source with controlled plasma potential," Nucl. Instrum. Meth. Phys. Res. B, vol. 161, pp. 1064-1068, Oct. 2000.
3. M. A. Lieberman, "Model of plasma immersion ion implantation," J. Appl. Phys., vol. 66, no. 7, pp. 2926-2929, 1989.
4. J. T. Scheuer, M. Shamim, and J. R. Conrad, "Model of plasma source ion implantation in planar, cylindrical, and spherical geometries," J. Appl. Phys., vol. 67, no. 3, pp. 1241-1245, 1990.
5. R. A. Stewart and M. A. Lieberman, "Model of plasma immersion ion implantation for voltage pulses with finite rise and fall times," J. Appl. Phys., vol. 70, no. 7, pp. 3481-3487, 1991.
6. W. G. En, M. A. Lieberman, and N. W. Cheung, "Comparison of experimental target currents with analytical model results for plasma immersion ion implantation," IEEE Trans. Plasma Sci., vol. 23, pp. 415-420, June 1995.
7. I. Alexeff, W. D. Jones, K. Lonngreen, and D. Montgomery, "Transient plasma sheath discovered by ion-acoustic waves," Phys. Fluids, vol. 12, no. 2, pp. 345-346, 1969.
8. G. A. Emmert and M. A. Henry, "Numerical simulation of plasma sheath expansion, with applications to plasma-source ion implantation," J. Appl. Phys., vol. 71, no. 1, pp. 113-117, 1992.
9. B. P. Wood, "Displacement current and multiple pulse effects in plasma source ion implantation," J. Appl. Phys., vol. 73, no. 10, pp. 4770-4778, 1993.
10. M. Chodorow and C. Susskind, Fundamentals of Microwave Electronics. New York: McGraw-Hill, 1964, ch. 5.
11. M. Ueda, L. A. Berni, R. M. Castro, A. F. Beloto, E. A. Abramof, J. O. Rossi, J. J. Barroso, and C. M. Lepienski, "Surface improvements of industrial components treated by plasma immersion ion implantation (PIII): Results and prospects," Surf. Coat. Technol., vol. 156, no. 1-3, pp. 71-76, July 2002.
12. S. M. Malik, R. P. Fetherson, K. Sridharan, and J. R. Conrad, "Sheath dynamics and dose analysis for planar targets in plasma source ion implantation," Plasma Sources Sci. Technol., vol. 2, no. 2, pp. 81-85, May 1993.
13. D. J. Rej, B. P. Wood, R. J. Faehl, and H. H. Fleischmann, "Magnetic insulation of secondary electrons in plasma source ion implantation," J. Vac. Sci. Technol. B, vol. 12, no. 2, pp. 861-866, Mar./Apr. 1994.
14. I. Langmuir and K. B. Blodgett, "Currents limited by space charge between coaxial cylinders," Phys. Rev., vol. 22, no. 4, pp. 347-356, Oct. 1923.