Time resolved PL study of GaInNAs quantum wells

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 75-76

  Potter, R J ^a   Balkan, N ^a   Marie, X ^b   Senes, M ^b   Carrere H ^c   Arnoult, A ^c   Fontaine, C ^c  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b CNRS   (France)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; KINETIC THEORY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TIME DOMAIN ANALYSIS;

EMISSION KINETICS; EXCITONIC STATES; GALLIUM INDIUM NITROGEN ARSENIDE QUANTUM WELLS; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037305656     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030050     Document Type: Article

References (6)

1. Mazzucato, S., Potter, R.J., Erol, A., Balkan, N., Chalker, P.R., Joyce, T.B., Bullough, T.J., Marie, X., Carrere, H., Bedel, E., Lacoste, G., Arnoult, A., and Fontaine, C.: 'S-shape behaviour of the temperature dependent energy gap in dilute nitrides', submitted to Physica E, 2002
2. Potter, R.J., Alexandropoulos D., Erol, A., Mazzucato, H., Balkan, N., Adams, M.J., Marie, X., Carrere, H., Bedel, E., Lacoste, G., Arnoult, A. and Fontaine, C.: 'Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement', submitted to Physica E, 2002
3. Potter, R.J., Balkan, N., Marie, X., Carrere, H., and Bedel, E.: 'Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs', Phys. Status Solidi A, 2001, 187, pp. 623-632
4. Grenouillet, L., Bru-Chevallier, C., Guillot, G., Gilet, P., Duvaut, P., Vannuffel, C., Million, A., and Chenevas-Paule, A. 'Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well', Appl. Phys. Lett., 2000, 76, pp. 2241-2243
5. Buyanova, I.A., Chen, W.M., and Monemar, B.: 'Electronic properties of Ga(In)NAs alloys', MRS Internet J. Nitride Semiconduct. Res., 2001, 6, paper 2.
6. Oueslati, M., Zouaghi, M., Pistol, M.E., Samuelson, L., Grimmeiss, H.G., and Balkenski, M.: 'Photoluminescence study of localization effects induced by fluctuating random alloy potential in indirect band-gap GaAsP', Phys. Rev. B, 1985, 32, pp. 8220-8227