Frequency shifts and local spin susceptibility of muonium in heavily-doped Si and GaAs

Physica B: Condensed Matter

Volumn 326, Issue 1-4, 2003, Pages 175-177

  Hoffman, K L ^a   Chow, K H ^a   Kiefl, R F ^b,c   Hitti, B ^c   Estle, T L ^d   Lichti, R L ^e  

^a UNIVERSITY OF ALBERTA   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^c TRIUMF   (Canada)

^d RICE UNIVERSITY   (United States)

^e TEXAS TECH UNIVERSITY   (United States)

Author keywords

Frequency shift; GaAs; Muonium; Semiconductors; Si; Spin exchange

Indexed keywords

PARAMAGNETISM; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

FREQUENCY SHIFT; SPIN EXCHANGE;

SEMICONDUCTOR DOPING;

EID: 0037303843     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01595-8     Document Type: Article

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