Shallow donor versus deep acceptor state in II-VI semiconductor compounds

Physica B: Condensed Matter

Volumn 326, Issue 1-4, 2003, Pages 124-127

  Weidinger, A ^a   Gil, J M ^b   Alberto, H V ^b   Vilao R C ^b   Piroto Duarte, J ^b   Ayres de Campos, N ^b   Cox, S F J ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF COIMBRA   (Portugal)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Hydrogen like defects; II VI semiconductors; Muonium states

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HYDROGEN;

MUONS;

SEMICONDUCTOR MATERIALS;

EID: 0037302548     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01594-6     Document Type: Article

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