New route for preparation of SiC-B4C/C composite with excellent oxidation resistance up to 1400°C

Journal of Materials Science Letters

Volumn 22, Issue 3, 2003, Pages 213-215

  Fan, Zhuang Jun ^a   Wei, Tong ^a   Shi, Jingli ^a   Zai, Gengtai ^a   Song, Jinren ^a   Liu, Lang ^a   Li, Jiangang ^b   Chen, Junling ^b  

^a INSTITUTE OF COAL CHEMISTRY   (China)

^b INSTITUTE OF PLASMA PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CARBIDE; COMPACTION; CRACK INITIATION; DOPING (ADDITIVES); HIGH TEMPERATURE APPLICATIONS; HOT PRESSING; OXIDATION RESISTANCE; SILICON CARBIDE; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY;

ATTRACTIVE MATERIALS; BACKSCATTERING ELECTRON IMAGES; GLASSY BOROSILICATE;

COMPOSITE MATERIALS;

EID: 0037297283     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022210328332     Document Type: Article

References (10)

1. O. YAMAMOTO and T. SASAMOTO, J. Eur. Ceram. Soc. 12 (1993) 435.
2. D. W. MCKEE, Carbon 25 (1987) 551.
3. I. OGAWA, K. KOBAYASHI and S. NISHIKAWA, J. Mater. Sci. 23 (1988) 1363.
4. D. W. MCKEE, Carbon 26 (1988) 659.
5. Q. G. GUO, J. R. SONG and L. LIU, ibid. 36 (1998) 1597.
6. Idem, ibid. 37 (1999) 33.
7. O. YAMAMOTO and T. SASAMOTO, J. Mater. Sci. Lett. 19 (2000) 1053.
8. W. G. ZHANG, H. M. CHENG and H. SANO, Carbon 36 (1998) 1591.
9. T. SOGABE, T. MATSUDA and K. KURODA, ibid. 33 (1995) 1783.
10. W. G. ZHANG and H. M. CHENG, ibid. 36 (1998) 991.