The U peak in the DLTS spectra of n-GaAs irradiated with fast neutrons and 65-MeV protons

Semiconductors

Volumn 37, Issue 2, 2003, Pages 140-144

  Brudnyi V N ^a   Peshev, V V ^b  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b NATIONAL RESEARCH TOMSK POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037295556     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1548653     Document Type: Article

References (13)

1. G. M. Martin, A. Mitonneau, and A. Mircea, Electron. Lett. 13, 191 (1977).
2. A. Goltzene, B. Meyer, and C. Schwab, Appl. Phys. Lett. 54, 907 (1989).
3. S. Makram-Ebeid and P. Boher, Mater. Sci. 10/12, 1075 (1986).
4. V. N. Brudnyǐ, N. G. Kolin, V. A. Novikov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 811 (1997) [Semiconductors 31, 686 (1997)].
5. R. Magno, M. Spencer, J. G. Giessner, and E. R. Weber, in Abstracts of 13th International Conference on Defects in Semiconductors (Coronado, Cal., 1984), p. 981.
6. V. N. Brudnyi, S. N. Grinyaev, and V. E. Stepanov, Physica B (Amsterdam) 212, 429 (1995).
7. D. Stievenard, J. C. Bourgoin, and M. J. Lannoo, J. Appl. Phys. 55, 1447 (1984).
8. V. A. Novikov and V. V. Peshev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 411 (1998) [Semiconductors 32, 366 (1998)].
9. V. N. Brudnyǐ, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 260 (1993) [Semiconductors 27, 145 (1993)].
10. D. Pons and J. C. Bourgoin, J. Phys. C: Solid State Phys. 18, 3839 (1985).
11. R. Coates and E. W. J. Mitchell, Adv. Phys. 24, 593 (1975).
12. C. E. Barnes, T. E. Zipperian, and L. R. Dawson, J. Electron. Mater. 14, 95 (1985).
13. V. N. Brudnyǐ, N. G. Kolin, and A. I. Potapov, Izv. Vyssh. Uchebn. Zaved., Fiz. 35 (10), 57 (1992).