Bias and frequency dependence of FET characteristics

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 I, 2003, Pages 588-592

  Parker, Anthony Edward ^a   Rathmell, James Grantley ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Charge carrier processes; Impact ionization; MESFETs; Microwave devices; MODFETs; Pulse measurements; Semiconductor device modeling

Indexed keywords

CHARGE CARRIERS; DISTORTION (WAVES); ELECTRON TRAPS; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT IONIZATION; INTERMODULATION; MICROWAVE DEVICES;

CHARGE CARRIER PROCESSES;

MESFET DEVICES;

EID: 0037292364     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807819     Document Type: Article

References (9)

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