GaSb quantum dot growth using InAs quantum dot stressors

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 333-338

  Muller Kirsch L ^a   Ledentsov, N N ^a   Sellin, R ^a   Pohl, U W ^a   Bimberg, D ^a   Hausler I ^b   Kirmse, H ^b   Neumann, W ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B1. GaSb

Indexed keywords

ANNEALING; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT STRESSORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291252     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01895-X     Document Type: Conference Paper

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