Temperature- and structural-parameters-dependent characteristics of V-band heterojunction FET MMIC DROs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 I, 2003, Pages 347-355

  Hosoya, Ken'ichi ^a   Ohata, Keiichi ^a   Inoue, Takashi ^a   Funabashi, Masahiro ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dielectric resonator oscillators (DROs); Dielectric resonators (DRs); FETs; Millimeter wave; Monolithic microwave integrated circuits (MMICs); Oscillators; Temperature

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC PROPERTIES; HETEROJUNCTIONS; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESONATORS; SPURIOUS SIGNAL NOISE; TUNING;

DIELECTRIC RESONATOR OSCILLATORS (DRO);

MICROWAVE OSCILLATORS;

EID: 0037291190     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807848     Document Type: Article

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