Breakdown-voltage memory effect in a neon-filled diode at 1 mbar

IEEE Transactions on Plasma Science

Volumn 30, Issue 4 II, 2002, Pages 1597-1601

  Maluckov, Cědomir A ^a   Radović, Miodrag K ^b  

^a UNIVERSITY OF BELGRADE   (Serbia)

^b UNIVERSITY OF NI   (Serbia)

Author keywords

3P2 metastable neon atoms; Breakdown voltages density distributions; Breakdown voltages distribution functions; De excitations metastable atoms; Dynamic voltage method; Electrical breakdown; Least square method; Memory effect; Neon

Indexed keywords

ATOMIC PHYSICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAST SQUARES APPROXIMATIONS; NEON; PARAMETER ESTIMATION; SECONDARY EMISSION;

HISTOGRAMS;

PLASMA DIODES;

EID: 0037267478     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2002.804168     Document Type: Article

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