Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 31-33

  Lee, Jeong Soo ^a   Ha, Daewon ^b   Choi, Yang Kyu ^b   King, Tsu Jae ^b   Bokor, Jeffrey ^b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Low frequency noise; Metal gate; Molybdenum; Nitrogen implantation; Oxide trap density; Silicon on insulator (SOI); Thin body

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); ION IMPLANTATION; MOLYBDENUM; NITROGEN; POLYSILICON; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

LOW-FREQUENCY NOISE; METAL GATE; NITROGEN IMPLANTATION; OXIDE TRAP DENSITY; ULTRATHIN BODY P-CHANNEL MOSFETS;

MOSFET DEVICES;

EID: 0037253003     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807025     Document Type: Letter

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