Ag-GaP Schottky photodiodes for UV sensors

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 215-217

  Pikhtin, Alexander N ^a   Tarasov, Sergey A ^a   Kloth, Bernd ^b  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b Kopenicker Strasse 325b D 12555   (Germany)

Author keywords

Gallium phosphide; Photodiodes; Schottky barriers; Ultraviolet detectors

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; IMPURITIES; LIQUID PHASE EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILVER COMPOUNDS; ULTRAVIOLET DETECTORS; VAPOR PHASE EPITAXY;

DIELECTRIC SPACER; GALLIUM PHOSPHIDE; SCHOTTKY PHOTODIODES; ULTRAVIOLET SENSORS;

PHOTODIODES;

EID: 0037250188     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807247     Document Type: Article

References (3)

1. M. Razeghi and A. Rogalski, J. Appl. Phys., vol. 79, no. 10, pp. 7433-7436, 1996.
2. A. N. Pikhtin, S. A. Tarasov, and B. Kloth, "New values of the Ag-n-GaP potential barrier," Pisma Zh. Tekhn. Fiz., vol. 28, no. 20, pp. 74-79, 2002. English Translation: Technical Physics Letters, vol. 28, no. 10, pp. 872-874, 2002.
3. C. R. Crowell and S. M. Sze, "Surface states and barrier height of metal-semiconductor systems," J. Appl. Phys., vol. 36, pp. 3212-3217, 1965.