Dark current reduction in stacked-type CMOS-APS for charged particle imaging

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 70-76

  Takayanagi, Isao ^a   Nakamura, Junichi ^a   Fossum, Eric R ^b   Nagashima, Kazuhide ^c   Kunihoro, Takuya ^c   Yurimoto, Hisayoshi ^c  

^a Micron Japan   (Japan)

^b MICRON TECHNOLOGY INC   (United States)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Active pixel sensor (APS); CMOS image sensor; Correlated double sampling (CDS); Detectors; Fixed pattern noise (FPN); Leakage current; Mass spectroscopy

Indexed keywords

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; ELECTRODES; HOT CARRIERS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; MASS SPECTROMETERS; READOUT SYSTEMS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO;

CMOS ACTIVE PIXEL SENSOR; CMOS IMAGE SENSOR; CORRELATED DOUBLE SAMPLING; FIXED-PATTERN NOISE; MASS SPECTROSCOPY;

IMAGE SENSORS;

EID: 0037249288     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.806963     Document Type: Article

References (12)

1. A. Benninghoven, Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends. New York: Wiley, 1987.
2. K. Matsumoto, H. Yurimoto, K. Kosaka, T. Nakamura, and S. Sueno, "A novel imager for secondary ion mass spectrometry," IEEE Trans. Electron Devices, vol. 40, pp. 82-85, Jan. 1993.
3. S. Fuerstenau, G. Soli, T. Cunningham, B. Hancock, B. Pain, and M. Sinha, "Active pixel sensors for charge detection mass spectrometry," in Proc. 46th ASMS Conf. Mass Spectroscopy and Allied Topics, Orlando, FL, May 1998.
4. I. Takayanagi, J. Nakamura, H. Yurimoto, T. Kunihiro, K. Nagashima, and K. Kosaka, "A Stacked CMOS APS for charge particle detection and its noise performance," in Proc. Progr. IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, R18, June 1999.
5. Y. Matsunaga, F. Hatori, H. Tango, and O. Yoshida, "Analysis of signal to noise ratio of photoconductive layered solid-stage imaging devices," IEEE Trans. Electron Devices, vol. 42, pp. 38-42, Jan. 1995.
6. T. Kunihiro, K. Nagashima, I. Takayanagi, J. Nakamura, K. Kosaka and H. Yurimoto, "Noise characteristics of stacked CMOS active pixel sensor for charged particles," Nucl. Instrum. Meth. Phys. Res., vol. A 470, pp. 512-519, 2001.
7. J. Matsunaga and S. Kohyama, "Evidence for impact-ionized electron in substrate of n-channel MOS structure," Appl. Phys. Lett., vol. 33, no. 4, pp. 335-337, 1978.
8. P. A. Childs, R. A. Stuart, and W. Eccleston, "Evidence of optical generation of minority carriers from saturated MOS transistors," Solid-State Electron., vol. 26, no. 7, pp. 685-688, 1983.
9. S. Tam, F. C. Hsu, C. Hu, and S. Muller, "Spatially resolved observation of visible-light emission from Si MOSFET's," IEEE Electron Device Lett., vol. EDL-4, pp. 386-388, Oct. 1983.
10. S. Tam and C. Hu, "Hot-electron-induced photon and photocarrier generation in silicon MOSFET's," IEEE Trans. Electron Devices, vol. ED-31, pp. 1264-1273, Sept. 1984.
11. T. Ohzone, H. Iwata, Y. Uraoka, and S. Odanaka, "Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFET's," Solid-State Electron., vol. 37, no. 7, pp. 1421-1428, 1994.
12. C. C. Wang and C. G. Sodini, "The effect of hot carriers on the operation of CMOS active pixel sensors," IEDM Tech. Dig., pp. 563-566, 2001.