Monolithic silicon E-δE telescope produced by the Quasi-Selective Epitaxy

Nukleonika

Volumn 48, Issue 1, 2003, Pages 31-34

  Kordyasz, Andrzej J ^a   Nossarzewska Orłowska, Elzbieta ^b   Piasecki, Ernest ^c   Lipiński, Dariusz ^b   Brzozowski, Andrzej ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

Monolithic E E telescope; Quasi selective epitaxy

Indexed keywords

SILICON;

ALPHA RADIATION; ANALYTIC METHOD; ARTICLE; IRRADIATION; RADIOLOGY; SIGNAL DETECTION;

EID: 0037246425     PISSN: 00295922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. 4 substrates. Solid State Technol 128;6:1353-1359
2. Ishitani A, Kurogi Y, Tsuya H (1984) Novel device isolation technology with selective epitaxial growth. IEEE Trans Electron Dev 31;9:1283-1288
3. Kim C, Kikuchi K, Husimi K, Ohkawa S, Saito I (1982) Epitaxial integrated E-dE position sensitive silicon detectors. IEEE Trans Nucl Sci 29;1:779-781
4. Kim C, Kim H, Kikuchi K, Husimi K, Ohkawa S, Fuchi Y (1980) Epitaxial integrated E-dE silicon detectors with a buried low-resistive diffused layer. IEEE Trans Nucl Sci 27;1:258-265
5. 2 silicon detectors. Nucl Instrum Meth 226:125-128
6. Kim Y, Kim C, Okhawa S et al. (1986) Self-biased silicon detectors with a built-in field for measuring heavy charged particles. IEEE Trans Nucl Sci 33;1:321-325
7. Knabe H, Mizushima Y, Kimura T, Kajiyama K (1976) High-speed silicon avalanche photodiodes with built-in field. J Appl Phys 47;8:3749-3751
8. Kordyasz AJ, Nossarzewska-Orłowska E, Sarnecki J (1996) Large area silicon detectors with built-in field. Nukleonika 41;4:23-28