The influence of Ge content and annealing temperature on the d.c and a.c conductivity of GexSe1-x thin films

Turkish Journal of Physics

Volumn 27, Issue 2, 2003, Pages 133-143

  Alias, M F A ^a   Makadsi, M N ^a   Al Ajeli, Z M ^a  

^a UNIVERSITY OF BAGHDAD   (Iraq)

Author keywords

a.c conductivity; d.c conductivity; Dielectric constant; Thin GxSe1 x film

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ANNEALING; ATOMIC SPECTROSCOPY; ELECTRIC CONDUCTIVITY; EVAPORATION; PERMITTIVITY; SEMICONDUCTING GERMANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

THERMAL EVAPORATION METHOD;

THIN FILMS;

EID: 0037243103     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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