Specific behaviour of stress relaxation in GexSi1-x films grown on porous silicon based mesa substrates: Computer calculations

Semiconductor Science and Technology

Volumn 18, Issue 1, 2003, Pages 39-44

  Novikov, P L ^a   Bolkhovityanov, Yu B ^a   Pchelyakov, O P ^a   Romanov, S I ^a   Sokolov, L V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; FINITE ELEMENT METHOD; POROSITY; POROUS SILICON; SEMICONDUCTING GERMANIUM; STRAIN; STRESS RELAXATION; SUBSTRATES;

THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0037231086     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/1/306     Document Type: Article

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