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Volumn 19, Issue 1, 2003, Pages 43-47

Enhanced resolution for future fabrication

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); IMAGING TECHNIQUES; LIGHT INTERFERENCE; MASKS; OPTICAL RESOLVING POWER; PHASE SHIFT; PHOTOLITHOGRAPHY; POLYSILICON; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

EID: 0037230485     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2003.1175107     Document Type: Article
Times cited : (7)

References (14)
  • 3
    • 0020249292 scopus 로고
    • Improving resolution in photolithography with a phase-shifting mask
    • M.D. Levenson, N.S. Viswanathan, and R. Simpson, "Improving resolution in photolithography with a phase-shifting mask," IEEE Trans. Electron Devices, vol. ED-29, p. 1828, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1828
    • Levenson, M.D.1    Viswanathan, N.S.2    Simpson, R.3
  • 4
    • 84957315547 scopus 로고
    • Extending the lifetime of optical lithography technologies with wavefront engineering
    • M.D. Levenson, "Extending the lifetime of optical lithography technologies with wavefront engineering," Jpn. J. Appl. Phys., vol. 33, pg. 6765, 1994.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 6765
    • Levenson, M.D.1
  • 5
    • 0005213734 scopus 로고    scopus 로고
    • The application of alternating phase-shifting masks to 140 nm gate patterning (II): Mask design and manufacturing
    • H.-Y. Liu, L. Karklin, Y.T. Wang, and Y.C. Pati, "The application of alternating phase-shifting masks to 140 nm gate patterning (II): Mask design and manufacturing," SPIE, vol. 3334, pg, 2, 1998.
    • (1998) SPIE , vol.3334 , pp. 2
    • Liu, H.-Y.1    Karklin, L.2    Wang, Y.T.3    Pati, Y.C.4
  • 6
    • 0012592909 scopus 로고
    • Effect of shifter edge angle and lens abberation on the pattern profile in edge-line phase-shift method
    • M. Nakatani, H. Matsuoka, H. Nakano, K. Kamon, K. Sato, O. Ishihara, and S. Mitsui, "Effect of shifter edge angle and lens abberation on the pattern profile in edge-line phase-shift method," SPIE, vol. 2197, pg. 158, 1994.
    • (1994) SPIE , vol.2197 , pp. 158
    • Nakatani, M.1    Matsuoka, H.2    Nakano, H.3    Kamon, K.4    Sato, K.5    Ishihara, O.6    Mitsui, S.7
  • 8
    • 85076473652 scopus 로고
    • Scattered light in photolithographic lenses
    • J.P. Kirk, "Scattered light in photolithographic lenses," SPIE, vol. 2197, pg. 566, 1994.
    • (1994) SPIE , vol.2197 , pp. 566
    • Kirk, J.P.1
  • 13
    • 0035758408 scopus 로고    scopus 로고
    • Patterning 80 nm gates using 248-nm lithography: An approach for 0.13 μm VLSI manufacturing
    • C-M. Wang, C.-W. Lai, J. Huang, and H-Y. Liu, "Patterning 80 nm gates using 248-nm lithography: An approach for 0.13 μm VLSI manufacturing," SPIE, vol. 4346, p. 452, 2001.
    • (2001) SPIE , vol.4346 , pp. 452
    • Wang, C.-M.1    Lai, C.-W.2    Huang, J.3    Liu, H.-Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.