A physical approach on SCOBIC investigation in VLSI

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 173-177

  Beauchene T ^a   Lewis, D ^a   Beaudoin, F ^b   Pouget, V ^a   Perdu, P ^b   Fouillat, P ^a   Danto, Y ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FAILURE ANALYSIS; INDUCED CURRENTS; LASER BEAMS; OPTIMIZATION;

SINGLE CONTACT OPTICAL BEAM-INDUCED CURRENT (SCOBIC);

VLSI CIRCUITS;

EID: 0037229038     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00282-2     Document Type: Article

References (6)

1. Beaudoin F.et al. Silicon thinning and polishing on packaged devices. Microelectron Reliab. 41(9-10):2001;1557-1561.
2. Lewis D.et al. Backside laser testing of ICs for SET sensitivity evaluation. IEEE Trans Nucl Sci. 48(6):2001.
3. Desplats R.et al. Backside localization of current leakage faults using thermal laser stimulation. Microelectron. Reliab. 41(9-10):2001;1539-1544.
4. Palaniappan M.et al. Application of single contact optical beam induced currents (SCOBIC) for backside failure analysis. ISTFA. 2000.
5. Chin J.M.et al. Single contact optical beam induced currents (SCOBIC) - A new failure analysis technique. IRPS. 2000.
6. Nikawa K et al. Verification and improvement of the optical beam induced resistance change (OBIRCH) method. Proceedings of the 20th International Symposium for Testing and Failure Analysis, 1994. p. 11-6.