Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 81-87

  Cova, P ^a   Menozzi, R ^a   Portesine, M ^a,b  

^a UNIVERSITY OF PARMA   (Italy)

^b POSICO SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DAMPING; OSCILLATIONS; PROTON IRRADIATION; RELIABILITY; SWITCHING;

SWITCHING SPEED;

SEMICONDUCTOR DIODES;

EID: 0037226499     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00268-8     Document Type: Article

References (28)

1. Wikstrom T, Bauer F, Linder S, Fichtner W. Experimental study on plasma engineering in 6500 V IGBTs. In: Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2000, Toulouse, F, May 2000. p. 37-40.
2. Azzopardi S., Kawamura A., Iwamoto H., Briat O., Vinassa J.M., Woirgard E.et al. Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200 V trench and new planar PT-IGBTs. Microelectron. Reliab. 41:2001;1731-1736.
3. Abbas C.C. Snubberless high-power rectifiers. IEEE Trans. Ind. Appl. 26:1990;991-994.
4. Zeller H. High power components-from the state of the art to future trends. In: Proceedings of the Power Conversion, May 1998. p. 7-16.
5. Rahimo MT, Shammas NYA. Optimisation of the reverse recovery behaviour of fast power diodes using injection efficiency and lifetime control techniques. In: Proceedings of the 7th European Conference on Power Electronics and Applications, EPE 97, Trondheim, N, September 1997. p. 2.099-2.104.
6. Beuermann M, Westerholt D. Turn-off capability of GTO snubber diodes. In: Proceedings Power Conversion, June 1997.
7. Galster N, Vetsch H, Roth, Tsyplakov E, Carroll E. The design, application and production-testing of high-power fast recovery diodes. In: Proceedings of the Power Conversion, May 1998. p. 55-65.
8. Cova P, Menozzi R, Pasqualetti M, Portesine M, Scicolone R, Zerbinati B. Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations. In: Proceedings 8th European Conference on Power Electronics and Applications, EPE 99, Lausanne, CH, September 1999.
9. Rahimo MT, Shammas NYA. Freewheeling diode failure modes in IGBT applications. In: Proceedings of the 8th European Conference on Power Electronics and Applications, EPE 99, Lausanne, CH, September 1999.
10. Schlangenotto H., Serafin J., Sawitzki F., Maeder H. Improved recovery of fast power diodes with self-adjusting p emitter efficiency. IEEE Electron Dev. Lett. 10:1989;322-324.
11. Kaschani K.T., Sittig R. Soft recovery of power diodes by means of field controlled injection. Solid State Electron. 43:1999;245-254.
12. Barthelme ß R, Beuermann M, Winter N. New diodes with pressure contact for hard-switched high power converters. In: Proceedings of the 8th European Conference on Power Electronics and Applications, EPE 99, Lausanne, CH, September 1999.
13. Pasqualetti M, Portesine M, Scicolone R, Zerbinati B, Menozzi R, Bellini A, et al. Effect of the physical structure on the recovery softness of pin diodes: experimental numerical analysis. In: Proceedings of the 7th European Conference on Power Electronics and Applications, EPE 97, Trondheim, N, September 1997. p. 4.013-4.017.
14. Rahimo MT, Findlay WJ, Coulbeck L. An improved design for ultra soft-fast recovery diodes suitable for (600-1200 V) IGBT applications. In: Proceedings of the Power Conversion, May 1998. p. 409-17.
15. Napoli E., Strollo A.G.M., Spirito P. Numerical analysis of local lifetime control for high-speed low-loss P-I-N diode design. IEEE Trans. Power Electron. 14:1999;615-621.
16. Galster N, Frecker M, Carrol E, Vobecký J, Hazdra P. Application-specific fast-recovery diodes: design and performance. In: Proc Power Conversion, 1998.
17. Hazdra P., Vobeký J., Brand K. Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques. Nucl. Instr. Measurem. Phys. Res. B. 186:2002;414-418.
18. Hazdra P., Brand K., Rubeš J., Vobecký J. Local lifetime control by ion irradiation: impact on blocking capability of power P-I-N diode. Microelectron J. 32:2001;449-456.
19. Zhang C, Waldmeyer J, Roggwiller P, Chen Z, Lu Y. Soft recovery characteristics of punch-through power diodes by proton irradiation. In: Proceedings of the 3rd Power Electronics and Motion Control Conference, IPEMC 2000, vol. 1, Beijing, China, August 2000. p. 229-34.
20. Lévêque P., Pellegrino P., Hallén A., Svensson B.G., Privitera V. Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon. Nucl. Instr. Meth. Phys. Res. B. 174:2001;297-303.
21. Schroder D.K. Semiconductor material and device characterization. 1990;398-404 Wiley Interscience, New York.
22. Vobecký J., Hazdra P., Záhlava Open circuit voltage decay lifetime of ion irradiated devices. Microelectron J. 30:1999;513-520.
23. ATLAS Device simulation software. SILVACO International, 1998.
24. Schroder D.K. Semiconductor material and device characterization. 1990;319-339 Wiley Interscience, New York.
25. Rahimo MT, Haban PT, Shammas NYA. Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes. In: Proceedings of the 6th European Conference on Power Electronics and Applications, EPE 95, Spain, September 1995. p. 1.557-1.582.
26. Benda V. Design considerations for fast soft reverse recovery diodes. In: Proceedings of the 5th European Conference on Power Electronics and Applications, EPE 93, Brighton, UK, September 1993. p. 288-92.
27. Brammer R., Hallén A., Håkansson J. Simulation of proton-induced local lifetime reduction in 10 kV diodes. IEEE Trans. Electron Dev. 40:1993;2089-2091.
28. Vobecký J., Hazdra P., Homola J. Optimization of power characteristics by means of ion irradiation. IEEE Trans. Electron Dev. 43:1996;2283-2289.