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Volumn 18, Issue 1, 2003, Pages 93-104

Dielectric relaxation in glassy Se75Te20Ag5

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; GLASS TRANSITION; PERMITTIVITY; SELENIUM COMPOUNDS;

EID: 0037221492     PISSN: 10426914     EISSN: None     Source Type: Journal    
DOI: 10.1081/AMP-120017591     Document Type: Article
Times cited : (11)

References (20)
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    • Price, D.L.1    Susman, S.2    Volin, K.J.3    Dejus, R.J.4
  • 2
    • 0027906759 scopus 로고
    • Ion-conducting amorphous semiconductor Ag-As-S
    • Tanaka, K. Ion-conducting amorphous semiconductor Ag-As-S. J. Non-Cryst. Solids 1993, 164-166, 1179.
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    • Tanaka, K.1
  • 3
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    • 0000310970 scopus 로고    scopus 로고
    • Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems
    • Kawaguchi, T.; Maruno, S.; Elliott, S.R. Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems. J. Appl. Phys. 1996, 79, 9096.
    • (1996) J. Appl. Phys. , vol.79 , pp. 9096
    • Kawaguchi, T.1    Maruno, S.2    Elliott, S.R.3
  • 8
    • 0020306487 scopus 로고
    • Dielectric parameters for semiconducting As-Ge-Te and Se-Ge-Te glassy alloys: Part II
    • Goyal, D.R.; Lakshminarayan, K.N.; Srivastava, K.K.; Hufnagel, F. Dielectric parameters for semiconducting As-Ge-Te and Se-Ge-Te glassy alloys: Part II. J. Pure Appl. Phys. 1982, 20, 1001.
    • (1982) J. Pure Appl. Phys. , vol.20 , pp. 1001
    • Goyal, D.R.1    Lakshminarayan, K.N.2    Srivastava, K.K.3    Hufnagel, F.4
  • 11
    • 33748565282 scopus 로고
    • Dispersion and absorption in dielectrics
    • Cole, R.H.; Cole, K.S. Dispersion and absorption in dielectrics. J. Chem. Phys. 1941, 9, 341.
    • (1941) J. Chem. Phys. , vol.9 , pp. 341
    • Cole, R.H.1    Cole, K.S.2
  • 12
    • 36849136106 scopus 로고
    • Dielectric relaxation and the internal field
    • Powles, J.G. Dielectric relaxation and the internal field. J. Chem. Phys. 1953, 21, 633.
    • (1953) J. Chem. Phys. , vol.21 , pp. 633
    • Powles, J.G.1
  • 13
    • 36849125005 scopus 로고
    • Viscosity, plasticity and diffusion as examples of absolute reaction rates
    • Eyring, H. Viscosity, plasticity and diffusion as examples of absolute reaction rates, J. Chem. Phys. 1936, 4, 283.
    • (1936) J. Chem. Phys. , vol.4 , pp. 283
    • Eyring, H.1
  • 14
    • 0000348194 scopus 로고
    • The deduction of reaction mechanisms from the theory of absolute rates
    • Stearn, A.E.; Eyring, H. The deduction of reaction mechanisms from the theory of absolute rates. J. Chem. Phys. 1937, 5, 113.
    • (1937) J. Chem. Phys. , vol.5 , pp. 113
    • Stearn, A.E.1    Eyring, H.2
  • 18
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    • States in the gap and recombination in amorphous semiconductors
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    • Mott, N.F.1    Davis, E.A.2    Street, R.A.3
  • 19
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    • States in the gap in glassy semiconductors
    • Street, R.A.; Mott, N.F. States in the gap in glassy semiconductors. Phys. Rev. Lett. 1975, 35, 1293.
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    • Street, R.A.1    Mott, N.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.