-
1
-
-
0024301693
-
Intermediate range order in binary and ternary glasses
-
Price, D.L.; Susman, S.; Volin, K.J.; Dejus, R.J. Intermediate range order in binary and ternary glasses. Phys. B 1988, 156-157, 189.
-
(1988)
Phys. B
, vol.156-157
, pp. 189
-
-
Price, D.L.1
Susman, S.2
Volin, K.J.3
Dejus, R.J.4
-
2
-
-
0027906759
-
Ion-conducting amorphous semiconductor Ag-As-S
-
Tanaka, K. Ion-conducting amorphous semiconductor Ag-As-S. J. Non-Cryst. Solids 1993, 164-166, 1179.
-
(1993)
J. Non-Cryst. Solids
, vol.164-166
, pp. 1179
-
-
Tanaka, K.1
-
3
-
-
0001045483
-
Photoelectric properties of Ag-As-S glasses
-
Tanaka, K.; Itoh, M.; Yoshida, N.; Ohto, M. Photoelectric properties of Ag-As-S glasses. J. Appl. Phys. 1995, 78, 3895.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 3895
-
-
Tanaka, K.1
Itoh, M.2
Yoshida, N.3
Ohto, M.4
-
4
-
-
0000310970
-
Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems
-
Kawaguchi, T.; Maruno, S.; Elliott, S.R. Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems. J. Appl. Phys. 1996, 79, 9096.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 9096
-
-
Kawaguchi, T.1
Maruno, S.2
Elliott, S.R.3
-
8
-
-
0020306487
-
Dielectric parameters for semiconducting As-Ge-Te and Se-Ge-Te glassy alloys: Part II
-
Goyal, D.R.; Lakshminarayan, K.N.; Srivastava, K.K.; Hufnagel, F. Dielectric parameters for semiconducting As-Ge-Te and Se-Ge-Te glassy alloys: Part II. J. Pure Appl. Phys. 1982, 20, 1001.
-
(1982)
J. Pure Appl. Phys.
, vol.20
, pp. 1001
-
-
Goyal, D.R.1
Lakshminarayan, K.N.2
Srivastava, K.K.3
Hufnagel, F.4
-
11
-
-
33748565282
-
Dispersion and absorption in dielectrics
-
Cole, R.H.; Cole, K.S. Dispersion and absorption in dielectrics. J. Chem. Phys. 1941, 9, 341.
-
(1941)
J. Chem. Phys.
, vol.9
, pp. 341
-
-
Cole, R.H.1
Cole, K.S.2
-
12
-
-
36849136106
-
Dielectric relaxation and the internal field
-
Powles, J.G. Dielectric relaxation and the internal field. J. Chem. Phys. 1953, 21, 633.
-
(1953)
J. Chem. Phys.
, vol.21
, pp. 633
-
-
Powles, J.G.1
-
13
-
-
36849125005
-
Viscosity, plasticity and diffusion as examples of absolute reaction rates
-
Eyring, H. Viscosity, plasticity and diffusion as examples of absolute reaction rates, J. Chem. Phys. 1936, 4, 283.
-
(1936)
J. Chem. Phys.
, vol.4
, pp. 283
-
-
Eyring, H.1
-
14
-
-
0000348194
-
The deduction of reaction mechanisms from the theory of absolute rates
-
Stearn, A.E.; Eyring, H. The deduction of reaction mechanisms from the theory of absolute rates. J. Chem. Phys. 1937, 5, 113.
-
(1937)
J. Chem. Phys.
, vol.5
, pp. 113
-
-
Stearn, A.E.1
Eyring, H.2
-
17
-
-
0018480279
-
Dielectric relaxation study of chalcogenide glasses
-
Srivastava, K.K.; Kumar, A.; Panwar, O.S.; Lakshminarayan, K.N. Dielectric relaxation study of chalcogenide glasses. J. Non-Cryst. Solids 1979, 33, 205.
-
(1979)
J. Non-Cryst. Solids
, vol.33
, pp. 205
-
-
Srivastava, K.K.1
Kumar, A.2
Panwar, O.S.3
Lakshminarayan, K.N.4
-
18
-
-
0016574223
-
States in the gap and recombination in amorphous semiconductors
-
Mott, N.F.; Davis, E.A.; Street, R.A. States in the gap and recombination in amorphous semiconductors. Philos. Mag. 1975, 32, 961.
-
(1975)
Philos. Mag.
, vol.32
, pp. 961
-
-
Mott, N.F.1
Davis, E.A.2
Street, R.A.3
-
19
-
-
0001764328
-
States in the gap in glassy semiconductors
-
Street, R.A.; Mott, N.F. States in the gap in glassy semiconductors. Phys. Rev. Lett. 1975, 35, 1293.
-
(1975)
Phys. Rev. Lett.
, vol.35
, pp. 1293
-
-
Street, R.A.1
Mott, N.F.2
-
20
-
-
0021973098
-
-
Firth, A.P.; Ewen, P.J.S.; Owen, A.E.; Huntley, C.M. Adv. Resist Technol. Processing II 1985, 539, 160.
-
(1985)
Adv. Resist Technol. Processing II
, vol.539
, pp. 160
-
-
Firth, A.P.1
Ewen, P.J.S.2
Owen, A.E.3
Huntley, C.M.4
|