Properties of Dy3+-doped PbWO4 single crystal grown by modified Bridgman method

Journal of Crystal Growth

Volumn 247, Issue 3-4, 2003, Pages 387-392

  Huang, Yanlin ^a   Zhu, Wenliang ^a   Feng, Xiqi ^a   Duan, Yong ^b   Man, Zhenyong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b TONGJI UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Energy transfer; B1. Dy3+; B1. PbWO4 single crystal; B2. Scintillator materials

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ENERGY TRANSFER; LEAD COMPOUNDS; PHOSPHORS; POSITIVE IONS; REACTION KINETICS; SINGLE CRYSTALS; THERMOLUMINESCENCE;

X-RAY EXCITED LUMINESCENCE;

CRYSTAL GROWTH;

EID: 0037212477     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01988-7     Document Type: Article

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