Analysis of the field-electron energy distribution from amorphous carbon-nitride films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 567-570

  Chen, Jun ^a   Huang, N Y ^a   Liu, X W ^a   Deng, S Z ^a   Xu, N S ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; APPROXIMATION THEORY; CHARGE COUPLED DEVICES; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; FIELD EMISSION DISPLAYS; FIELD EMISSION MICROSCOPES; NITROGEN; SPUTTERING; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS CARBON-NITRIDE FILMS; FIELD-ELECTRON ENERGY DISTRIBUTION; INFRARED SPECTROMETRY; NEGATIVE ELECTRON AFFINITY;

ELECTRON ENERGY LEVELS;

EID: 0037207765     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1527599     Document Type: Article

References (21)

1. N. S. Xu, R. V. Latham, and Y. Tzeng, Electron. Lett. 29, 1596 (1993).
2. N. L. Rupesinghe, M. Chhowalla, G. A. J. Amaratunga, P. Weightman, D. Martin, P. Unsworth, and J. Murray, Appl. Phys. Lett. 77, 1908 (2000).
3. N. S. Xu, J. Chen, and S. Z. Deng, Appl. Phys. Lett. 76, 2463 (2000).
4. I. Brodie and C. A. Spindt, Adv. Electron. Electron Phys. 83, 1 (1992).
5. N. Kumar, H. K. Schmidt, and C. Xie, Solid State Technol. 13, 427 (1995).
6. G. A. J. Amaratunga and S. R. P. Silva, Appl. Phys. Lett. 68, 2529 (1996).
7. N. S. Xu, J. C. She, S. E. Huq, J. Chen, and S. Z. Deng, Appl. Phys. Lett. 73, 3668 (1998).
8. V. V. Zhirnov, W. B. Choi, J. J. Cuomo, and J. J. Hren, Appl. Surf. Sci. 94/95, 123 (1996).
9. M. L. Cohen, Mater. Sci. Eng., A 209, 1 (1996).
10. A. Bazian and T. Badzian, Int. J. Refract. Met. Hard Mater. 15, 3 (1997).
11. E. J. Chi, J. Y. Sim, S. M. Lee, and H. K. Baik, Appl. Phys. Lett. 71, 324 (1997).
12. X. W. Liu, C. H. Lin, L. T. Chao, and H. C. Shih, Mater. Lett. 44, 304 (2000).
13. J. P. Xanthakis and A. Modinos, Diamond Relat. Mater. 8, 798 (1999).
14. J. Chen, A. X. Wei, S. Z. Deng, Y. Lu, X. G. Zheng, D. H. Chen, D. Mo, S. Q. Peng, and N. S. Xu, J. Vac. Sci. Technol. B 16, 697 (1998).
15. J. Chen, N. S. Xu, E. G. Wang, S. Z. Deng, D. H. Chen, and A. X. Wei, Chin. Phys. Lett. 15, 539 (1998).
16. J. Kouvetakis, A. Bandari, M. Todd, B. Wilkens, and N. Cave, Chem. Mater. 6, 811 (1994).
17. D. Li, Y. W. Chung, S. Yang, M. S. Wong, F. Adibi, and W. D. Sproul, J. Vac. Sci. Technol. A 12, 1470 (1994).
18. Z. J. Zhang, S. S. Fan, J. L. Huang, and C. M. Lieber, Appl. Phys. Lett. 68, 2639 (1996).
19. R. D. Young, Phys. Rev. 113, 110 (1959).
20. R. Schlesser, M. T. McClure, W. B. Choi, J. J. Hren, and Z. Sitar, Appl. Phys. Lett. 70, 1596 (1997).
21. P. Soven, E. W. Plummer, and N. Kar, CRC Crit. Rev. Solid State Sci. 6, 111 (1976).