Low leakage current optically gated silicon field emitter arrays

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 464-470

  Liu, Kendrick X ^a   Heritage, Jonathan P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHEMICAL VAPOR DEPOSITION; DRY ETCHING; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDATION; PHOTOCURRENTS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THICK FILMS; TRIODES;

GATE ELECTRODE; PHOTOENHANCED FIELD EMISSION; PHOTOEXCITATION; SILICON FIELD EMITTER ARRAYS; WET OXIDATION;

FIELD EMISSION CATHODES;

EID: 0037207735     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1539060     Document Type: Article

References (33)

1. A. P. Burden, et al., J. Vac. Sci. Technol. B 18, 900 (2000).
2. J. M. Kim, H. W. Lee, Y. S. Choi, J. E. Jung, N. S. Lee, Y. W. Jin, and N. S. Park, J. Vac. Sci. Technol. B 16, 744 (1999).
3. A. A. Talin, K. A. Dean, and J. E. Jaskie, Solid-State Electron. 45, 963 (2001).
4. W. B. Choi, D. S. Chung, S. H. Park, and J. M. Kim, Society for Information Display Int'l Symposium, San Jose, CA, 1999, pp. 1134-1137.
5. S. J. Newman, R. T. Smith, and C. Penn, Society for Information Display Int'l Symposium, Santa Anaheim, CA, 1998, pp. 95-98.
6. A. A. Talin, B. Chalamala, B. F. Coll, J. E. Jaskie, R. Petersen, and L. Dworsky, Flat-Panel Display Materials Symposium, San Francisco, CA, 1998, pp. 175-177.
7. K. L. Jensen, R. H. Abrams, and R. K. Parker, J. Vac. Sci. Technol. B 16, 749 (1998).
8. C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 14, 1986 (1996).
9. C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 16, 758 (1998).
10. D. R. Whaley, B. M. Gannon, C. R. Smith, C. M. Armstrong, and C. A. Spindt, IEEE Trans. Plasma Sci. 28, 727 (2000).
11. P. M. Phillips, R. E. Neidert, L. Malsawma, and C. Hor, IEEE Trans. Electron Devices 42, 1674 (1995).
12. K. Sawada, N. Matsumura, and T. Ando, IEEE Trans. Electron Devices 45, 321 (1998).
13. K. Sawada, and M. Ishida, Sensors and Actuators 82, 259 (2000).
14. C. A. Brau, Nucl. Instrum. Methods Phys. Res. A 393, 426 (1997).
15. A. Barthélémy et al., Nucl. Instrum. Methods Phys. Res. A 455, 405 (2000).
16. A. Aboubacar et al., Appl. Surf. Sci. 111, 246 (1997).
17. A. A. Dadykin, Radio Eng. Electron. Phys. 25, 108 (1980).
18. M. H. Herman and T. T. Tsong, Phys. Lett. 71A, 461 (1979).
19. D. K. Schroder, R. N. Thomas, J. Vine, and H. C. Nathanson, IEEE Trans. Electron Devices 21, 785 (1974).
20. A. I. Klimin, A. A. Mostovskii, I. A. Pustyl'nik, D. A. Askseev, L. P. Titova, and N. M. Enden, Bull. Acad. Sci. USSR, Phys. Ser. (Engl. Transl.) 40, 20 (1976).
21. R. N. Thomas and H. C. Nathanson, Appl. Phys. Lett. 21, 384 (1972).
22. R. N. Thomas and H. C. Nathanson, Appl. Phys. Lett. 21, 387 (1972).
23. N. E. McGruer, K. Warner, P. Singhal, J. J. Gu, and C. Chan, IEEE Trans. Electron Devices 38, 2389 (1991).
24. J. T. Trujillo, Dissertation, University of California, Davis, Davis, CA, 1999.
25. R. B. Marcus, T. S. Ravi, and T. Gmitter, Appl. Phys. Lett. 56, 236 (1990).
26. J. T. Trujillo and C. E. Hunt, J. Vac. Sci. Technol. B 11, 454 (1993).
27. J. P. Spallas, J. H. Das, and N. C. MacDonald, J. Vac. Sci. Technol. B 11, 437 (1993).
28. M. Urayam, T. Ise, Y. Maruo, A. Kishi, R. Imamoto, and T. Takase, Jpn. J. Appl. Phys., Part 1 32, 6293 (1993).
29. J T. Trujillo, A. Chakhovskoi, and C. E. Hunt, Proceedings of the 8th International Conference on Vacuum Microelectronics, Portland, OR, 1995, pp. 42-46.
30. A. Herrera-Gómez, G. Vergara, and W. E. Spicer, J. Appl. Phys. 79, 7318 (1996).
31. A. Herrera-Gómez and W. E. Spicer, Proc. SPIE 2022, 51 (1993).
32. I. P. Csorba, Image Tubes (Howard W. Sams, Indianapolis, IN, 1984), pp. 209-228.
33. D. Sertore, S. Schreiber, K. Floettmann, F. Stephan, K. Zapfe, and P. Michelato, Nucl. Instrum. Methods Phys. Res. A 445, 422 (2000).