Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Vacuum

Volumn 68, Issue 2, 2002, Pages 197-202

  He, Le Nian ^a,b   Xu, Jin ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Amorphous SiO2; BHF etch rate; Reactive RF magnetron sputtering; Resistivity

Indexed keywords

ABSORPTION; ARGON; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRON MICROSCOPES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; OXYGEN; POROSITY; SILICA; STOICHIOMETRY;

ELECTRON SCAN MICROSCOPES;

AMORPHOUS FILMS;

EID: 0037206619     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00388-3     Document Type: Article

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