SCOPUS 정보 검색 플랫폼

Volumn 527, Issue 1-2, 2002, Pages 47-55

Metalloporphyrin/polysiloxane modified n-GaAs surfaces: Effect on photoelectrochemical efficiency and surface stability

Author keywords

Efficiency; Metalloporphyrin; n GaAs; Photoelectrochemistry; Short circuit current; Stability

Indexed keywords

ANNEALING; ELECTRODES; PHOTODEGRADATION; SEMICONDUCTOR DEVICES; SHORT CIRCUIT CURRENTS; SILICONES; SURFACE CHEMISTRY;

PHOTOELECTROCHEMISTRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037204646 PISSN: 00220728 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0728(02)00680-0 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.