Pressure tuning of strains in Zn1-xCdxSe/ZnSe single quantum wells

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 306, Issue 2-3, 2002, Pages 160-165

  Guo, Z Z ^b,c   Liang, X X ^a,b   Ban, S L ^a,b  

^a CCAST WORLD LABORATORY   (China)

^b INNER MONGOLIA UNIVERSITY   (China)

^c INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

Direct indirect band transformation; Hydrostatic pressure; Quantum well; Strain

Indexed keywords

CADMIUM; HYDROSTATIC PRESSURE; II-VI SEMICONDUCTORS; STRAIN; ZINC SELENIDE;

CADMIUM CONTENT; DIRECT-INDIRECT BAND TRANSFORMATION; HEAVY HOLES; LIGHT HOLES; PRESSURE TUNING; SINGLE QUANTUM WELL; STRUCTURAL PHASE TRANSITION;

SEMICONDUCTOR QUANTUM WELLS;

CADMIUM; SELENIUM; ZINC;

ARTICLE; CALCULATION; ENERGY; HYDROSTATIC PRESSURE; MATHEMATICAL ANALYSIS; PHASE TRANSITION; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037203224     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(02)01540-2     Document Type: Article

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