Ductile behaviour in single-point diamond-turning of single-crystal silicon

Journal of Materials Processing Technology

Volumn 127, Issue 2, 2002, Pages 187-190

  Chao, C L ^a   Ma, K J ^b   Liu, D S ^b   Bai, C Y ^b   Shy, T L ^b  

^a TAMKANG UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Diamond; Silicon; Single crystal

Indexed keywords

BRITTLENESS; CRACK INITIATION; CRACK PROPAGATION; CRYSTALLOGRAPHY; DUCTILITY; SEMICONDUCTING DIAMONDS; SINGLE CRYSTALS;

DIAMOND-TURNING;

SEMICONDUCTING SILICON;

EID: 0037201003     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-0136(02)00124-3     Document Type: Conference Paper

References (8)

1. Ductile regime turning of Ge and Si
2. Brittle-ductile transition phenomena in micro-indentation and micro-machining
3. Abrasive machining of silicon
4. A future technology for silicon wafer processing for ULSI
5. Ductile-regime grinding of brittle materials
6. Single-point diamond machining of glasses