GaN microcavities formed by laser lift-off and plasma etching

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 98-101

  Martin, R W ^a   Kim, H S ^a   Cho, Y ^b   Edwards, P R ^a   Watson, I M ^a   Sands, T ^b   Cheung, N W ^b   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b University of California Berkeley   (United States)

Author keywords

GaN; Laser lift off; Luminescence; Microcavity; Nitride semiconductors

Indexed keywords

ELECTRON BEAMS; EVAPORATION; INTERFACES (MATERIALS); LASER BEAM EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MULTILAYERS; NUCLEATION; PHOTOLUMINESCENCE; PLASMA ETCHING; SUBSTRATES;

MICROCAVITIES;

GALLIUM NITRIDE;

EID: 0037198505     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00042-9     Document Type: Conference Paper

References (15)

1. eMRS spring meeting