Characterization of deep levels in rapid-thermal-annealed AlGaInP

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 389-392

  Tukiainen, A ^a   Dekker, J ^b   Leinonen, T ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

Aluminium gallium indium phosphide; Defect formation; DLTS; Molecular beam epitaxy; Semiconductors

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

DEEP-LEVEL DEFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037197420     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01027-3     Document Type: Conference Paper

References (15)