Low-temperature growth of epitaxial β-SiC on Si(100) using supersonic molecular beams of methylsilane

Journal of Physical Chemistry B

Volumn 106, Issue 33, 2002, Pages 8019-8028

  Sanchez, Errol C ^a,b   Sibener, Steven J ^a  

^a UNIVERSITY OF CHICAGO   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; KINETIC ENERGY; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SILANES; STRAIN;

SUBSTRATE TEMPERATURES;

SILICON CARBIDE;

EID: 0037158911     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp020905u     Document Type: Article

References (43)

1. Barker, J.A.; Auerbach, D.J. Surf. Sci. Rep. 1984, 4, 1.
2. Arumainayagam, C.R.; Madix, R.J. Prog. Surf. Sci. 1991, 38, 1.
3. Yu, M.L.; DeLouise, L.A. Surf. Sci. Rep. 1994, 19, 285.
4. Zhang, S.; Cui, J.; Tanaka, A.; Aoyagi, Y. Appl. Phys. Lett. 1994, 64, 1105.
5. Eres, D.; Lowndes, D.H.; Tischler, J.Z. Appl. Phys. Lett. 1989, 55, 1008.
6. Kusunoki, I.; Hiroi, M.; Sato, T.; Igari, Y.; Tomoda, S. Appl. Surf. Sci. 1990, 45, 171.
7. Wang, D.; Ma, T.P.; Golz, J.W.; Halpern, B.L.; Schmitt, J.J. IEEE Electron Device Lett. 1992, 13, 482.
8. Cross, J.B.; Hoffbauer, M.A.; Fart, J.D.; Glembocki, O.J.; Bermudez, V.M. Mater. Res. Soc. Symp. Proc. 1991, 204, 59.
9. Malik, R.; Gulari, E.; Li, S.H.; Bhattacharya, P.K.; Singh, J. J. Crystal Growth 1995, 150, 984.
10. Brown, K.A.; Ustin, S.A.; Lauhon, L.; Ho, W. J. Appl. Phys. 1996, 79, 7667.
11. Pacheco, K.A.; Ferguson, B.A.; Banerjee, S.; Mullins, C.B. Appl. Phys. Lett. 1996, 69, 1110.
12. Ustin, S.; Brown, K.; Ho, W. Rev. Sci. Instr. 2000, 71, 1479.
13. Boo, J.H.; Ustin, S.; Ho, W. Thin Solid Films 1999, 343-344, 650.
14. Sanchez, E.C. Doctoral Dissertation, University of Chicago, 1997.
15. Ustin, S.; Long, C.; Ho, W. Solid-State Electron. 1998, 42, 2321.
16. Ikoma, Y.; Endo, T.; Watanabe, F.; Motooka, T. J. Vac. Sci. Technol. A 1998, 16, 763.
17. Ikoma, Y.; Endo, T.; Watanabe, F.; Motooka, T. Jpn. J. Appl. Phys. Part 2 1999, 38, L301.
18. Capano, M.A. J. Appl. Phys. 1995, 78, 4790.
19. Knowles, M.P.; Leone, S.R. Chem. Phys. Lett. 1996, 258, 217.
20. Eaglesham, D.J. J. Appl. Phys. 1995, 77, 3597.
21. Davis, R.F.; Palmour, J.W.; Edmond, J.A. Diamond Relat. Mater. 1992, 1, 109.
22. Nishino, S.; Powell, J.A.; Will, H.A. Appl. Phys. Lett. 1983, 42, 460.
23. Addamiano, A.; Sprague, J.A. Appl. Phys. Lett. 1984, 44, 525.
24. Golecki, I.; Reidinger, F.; Marti, J. Appl. Phys. Lett. 1992, 60, 1703.
25. Krotz, G.; Legner, W.; Muller, G.; Grueninger, H.W.; Smith, L.; Leese, B.; Jones, A.; Rushworth, S. Materials Sci. and Eng. 1995, B29, 154.
26. Johnson, D.; Perrin, J.; Mucha, J.A.; Ibbotson, D.E. J. Phys. Chem. 1993, 97, 12 937.
27. Ohshita, Y. J. Cryst. Growth 1995, 147, 111.
28. Nordell, N.; Nishino, S.; Yang, J.W.; Jacob, C.; Pirouz, P.J. Electrochem. Soc. 1995, 142, 565.
29. Nordell, N.; Nishino, S.; Yang, J.W.; Jacob, C.; Pirouz, P. Appl. Phys. Lett. 1994, 64, 1647.
30. Chiu, H.T.; Hsu, J.S. Thin Solid Films 1994, 252, 13.
31. Xia, L.Q.; Jones, M.E.; Maity, N.; Engstrom, J.R. J. Vac. Sci. Technol. A 1995, 13, 2651.
32. Montgomery, J.S.; Schneider, T.P.; Carter, R.J.; Bamak, J.P.; Chen, Y.L.; Hauser, J.R.; Nemanich, R.J. Appl. Phys. Lett. 1995, 67, 2194.
33. Neuwald, U.; Hessel, H.E.; Feltz, A.; Memmert, U.; Behm, R.J. Surf. Sci. 1993, 296, L8.
34. Sanganeria, M.K.; Ozturk, M.C.; Violette, K.; Harris, G.; Lee, C.A.; Maher, D.M. Appl. Phys. Lett. 1995, 66, 1255.
35. Mogab, C.J. J. Electrochem. Soc. 1973, 120, 932.
36. Xia, L.Q.; Engstrom, J.R. J. Chem. Phys. 1994, 101, 5329.
37. Itoh, N.; K. Okamoto, K. J. Appl. Phys. 1988, 63, 1486.
38. Fissel, A.; Akhtariev, R.; Richter, W. Thin Solid Films 2000, 380, 42.
39. Nakamura, S.; Hatayama, T.; Kimoto, T.; Fuyuki, T.; Matsunami, H. Materials-Science-Forum 2000, 338-342, 201.
40. Kamins, T.I. Polycrystalline Silicon for Integrated Circuits Application; 1988.
41. Neudorlf, P.S.; Strausz, O.P. J. Phys. Chem. 1978, 82, 241.
42. Sawrey, B.A.; O'Neal, H.E.; Ring, M.A.; Cofey, D. Int. J. Chem. Kinet. 1984, 16, 7.
43. Ikoma, Y.; Endo, T.; Watanabe, F.; Motooka, T. Appl. Phys. Lett. 1999, 75, 3977.