Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition)

Thin Solid Films

Volumn 409, Issue 1, 2002, Pages 1-7

  Cho, N I ^a   Kim, Y M ^a   Lim, J S ^a   Hong, C ^b   Sul, Y ^c   Kim, C K ^b  

^a SunMoon University   (South Korea)

^b Soonchunhyang University   (South Korea)

^c Hoseo University   (South Korea)

Author keywords

Chemical vapor deposition (CVD); Crystallization; Laser irradiation; Silicon carbide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER BEAM EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

LASER ANNEALING;

THIN FILMS;

EID: 0037156021     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00094-9     Document Type: Conference Paper

References (7)