Gold injection into germanium occurring during hydrogen atom recombination

Vacuum

Volumn 68, Issue 3, 2002, Pages 269-273

  Matyushin, V M ^a   Martinyuk, R V ^a  

^a ZAPORIZHZHYA NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

Author keywords

Atom injection; Defaults; Germanium; Gold; Hydrogen adsorption; Hydrogen recombination; Impurity diffusion

Indexed keywords

ADSORPTION; ATOMS; DIFFUSION; GERMANIUM; HYDROGEN; MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

HYDROGEN RECOMBINATION;

GOLD;

EID: 0037145940     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00456-6     Document Type: Conference Paper

References (7)

1. Katz S., Kistiakowsky G.B., Steiner R.F. J Am Chem Soc. 71:1949;2258-2260.
2. Lang D.V. Deep-level transient spectroscopy. J Appl Phys. 45(7):1974;3023-3032.
3. Dunlap W.C. Phys Rev. 97:1955;614-618.
4. Shewmon P.G. Diffusion in solids. 1963;McGraw-Hill, New York.
5. Atomic diffusion in semiconductors. In: Shaw D, editor. London and New York: Plenum Press, 1973.
6. Blinov U.F., Serba P.V. Semiconductors. 17:1983;1706-1708.
7. Smith R.A. Semiconductors. London, New York, Melbourne: Cambridge University Press, 1978.