Electronic band structure of new quasi-one-dimensional crystals: Zr8C12 and Nb8C12 clusters inside single-walled carbon, silicon, BN and GaN nanotubes

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 297, Issue 5-6, 2002, Pages 436-441

  Ivanovskaya, V V ^a   Sofronov, A A ^a   Ivanovskii, A L ^b  

^a URAL FEDERAL UNIVERSITY   (Russian Federation)

^b INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

Author keywords

Electronic band structure; Metallocarbohedrenes; Nanocomposites; Nanotubes

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOCOMPOSITES; NANOTUBES; NIOBIUM COMPOUNDS; SILICON; SINGLE-WALLED CARBON NANOTUBES (SWCN);

ELECTRONIC BAND; ELECTRONIC BAND STRUCTURE; GAN NANOTUBES; METALLOCARBOHEDRENES; QUASI-ONE DIMENSIONAL; SINGLE-WALLED CARBON; TIGHT BINDING METHODS;

ZIRCONIUM COMPOUNDS;

CARBON; GALLIUM; NEODYMIUM; SILICON; ZIRCONIUM DERIVATIVE;

ARTICLE; CRYSTAL STRUCTURE; ELECTRONICS; METHODOLOGY; NANOTECHNOLOGY; TUBE;

EID: 0037141028     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(02)00253-0     Document Type: Article

References (12)