Organometallic precursors for the formation of GaN by MOCVD: Structural characterization of (CH3)3GaNH(CH2CH3)2 by gas-phase electron diffraction and ab initio molecular orbital calculations

Journal of Physical Chemistry A

Volumn 106, Issue 37, 2002, Pages 8762-8768

  Aarset, Kirsten ^a   Beer, Carolyn E ^b   Hagen, Kolbjørn ^c   Page, Elizabeth M ^b   Rice, David A ^b  

^a OSLO METROPOLITAN UNIVERSITY   (Norway)

^b UNIVERSITY OF READING   (United Kingdom)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; HYDROCARBONS; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PROBABILITY DENSITY FUNCTION; PYROLYSIS;

MOLECULAR ORBITALS;

ORGANOMETALLICS;

EID: 0037136766     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp020523o     Document Type: Article

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