Surface emitting lasers by selective area epitaxy for optical clock distribution

Electronics Letters

Volumn 38, Issue 15, 2002, Pages 794-795

  Swint, R B ^a   Elarde, V C ^a   Raychaudhuri, S ^a   Coleman, J J ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER DISTRIBUTION; EPITAXIAL GROWTH; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; WAVEGUIDES;

OPTICAL CLOCK DISTRIBUTION; SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0037130429     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020537     Document Type: Article

References (7)

1. Rationale and challenges for optical interconnects to electronic chips
2. Optical interconnections for VLSI systems
3. Two-dimensional 45° surface-normal microcoupler array for guided wave optical clock distribution
4. Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum well laser with a passive waveguide by selective-area MOCVD
5. Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers
6. Analysis of second-order gratings
7. Metallization to asymmetric cladding separate confinement heterostructure lasers