Corrosion study at Cu-Al interface in microelectronics packaging

Applied Surface Science

Volumn 191, Issue 1-4, 2002, Pages 67-73

  Tan, C W ^a,b,c   Daud, A R ^a   Yarmo, M A ^a  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^b ON Semiconductor SCG Industries M Sdn Bhd Malaysia   (Malaysia)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Autoclave; Shear force; Stress corrosion cracking

Indexed keywords

CHEMICAL BONDS; CRACK INITIATION; ELECTRONICS PACKAGING; INTERFACES (MATERIALS); INTERMETALLICS; MICROELECTRONICS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SHEAR STRESS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL SHEAR (IS) FORCE;

STRESS CORROSION CRACKING;

EID: 0037123521     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00150-2     Document Type: Article

References (15)

1. Void formation and reliability in gold-aluminium bonding
2. 3 /Al film
3. Purple plague revisited
4. Development of copper wire bonding technology
5. Development of copper wire bonding application technology
6. Optimisation of copper wire bonding on Al-Cu metallization
7. Effect of heat treatment on the shear strength and fracture modes of copper wire thermosonic ball bonds to Al-1% Si device metallization
8. Microcorrosion of Al-Cu bonding pads
9. A new failure mechanism of bond pad corrosion in plastic encapsulated IC's under temperature, humidity and bias stress
10. Whitlock, A bond failure mechanism
11. The effect of high temperature intermetallic growth on ball shear-induced cratering
12. Microchemical identification of corrosion related problems on electronic components
13. Avoidance of corrosion problems in consumer electronic products