Structural and electronic properties of thallium overlayers on the Si(111)-7 × 7 surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 23, 2002, Pages 2333121-2333124

  Lee, S S ^a   Song, H J ^a   Kim, N D ^a   Chung, J W ^a   Kong, K ^b   Ahn, D ^b   Yi, H ^c   Yu, B D ^b   Tochihara, Hiroshi ^d  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b University of Seoul   (South Korea)

^c Korea Institute of Science and Technology Information (KISTI)   (South Korea)

^d KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; THALLIUM;

ARTICLE; ATOMIC PARTICLE; CALCULATION; CHEMICAL STRUCTURE; ELECTRONICS; REPRODUCIBILITY; SEMICONDUCTOR; SURFACE PROPERTY; THEORY;

EID: 0037116173     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. See, for example, Winfried Mönch, Semiconductor Surface and Interface (Springer-Verlag, New York, 1993), and references therein.
2. L. Vitali, F. P. Leisenberger, M. G. Ramsey, and F. P. Netzer, J. Vac. Sci. Technol. A 17, 1676 (1999).
3. J. M. Ricart, J. Rubio, and F. Illas, Phys. Rev. B 42, 5212 (1990).
4. L. Vitali, M. G. Ramsey, and F. P. Netzer, Surf. Sci. 452, L281 (2000).
5. L. Vitali, M. G. Ramsey, and F. P. Netzer, Phys. Rev. Lett. 83, 316 (1999).
6. M. Bockstedte, Alexander Kley, Jörg Neugebauer, and Matthias Scheffler, Comput. Phys. Commun. 107, 187 (1997).
7. See http://www.webeleinents.com
8. H. Tochihara et al. (unpublished).