Electronic structure of dangling bonds in amorphous silicon studied via a density-matrix functional method

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1952131-1952136

  Hennig, R G ^a,b   Fedders, P A ^a   Carlsson, A E ^a  

^a WASHINGTON UNIVERSITY   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; ELECTRON; ENERGY; HYDROGENATION; MATHEMATICAL ANALYSIS; MATHEMATICAL PARAMETERS; MODEL; MOLECULAR INTERACTION;

EID: 0037113564     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.195213     Document Type: Article

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