Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5745-5748

  Aguirre, Myriam H ^a   Cánepa, Horacio R ^a   Walsöe de Reca, Noemí E ^a  

^a Instituto de Investigaciones Cientificas y Tecnicas de Las Fuerzas Armadas   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON IMPLANTATION; DAMAGE DISTRIBUTION; DAMAGED REGION; DISLOCATION LOOP; HGCDTE; HIGH DOSE; IMPLANTATION DOSE; INDUCED DAMAGE; ISOTHERMAL VAPOR PHASE EPITAXY; PHOTOVOLTAIC DETECTOR; ROOM TEMPERATURE; STRUCTURAL DAMAGES;

ION IMPLANTATION; MERCURY COMPOUNDS;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037113054     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512695     Document Type: Article

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